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Vishay semiconductors, Circuit configuration – C&H Technology VS-GB300LH120N User Manual

Page 6

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VS-GB300LH120N

www.vishay.com

Vishay Semiconductors

Revision: 14-Mar-13

5

Document Number: 94784

For technical questions within your region:

[email protected]

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Fig. 9 - Diode Switching Loss vs. R

g

Fig. 10 - Diode Transient Thermal Impedance

CIRCUIT CONFIGURATION

E (mJ)

0

5

10

15

20

25

0

10

20

30

40

50

R

g

(Ω)

E

rec

V

GE

= - 15 V

T

J

= 125 °C

V

CC

= 600 V

I

C

= 300 A

t (s)

Z

thJC

(K/W)

10

0

10

-1

10

-2

10

-3

10

-0

10

-1

10

-1

10

-2

10

-3

Diode

1

6
7

3

2

LINKS TO RELATED DOCUMENTS

Dimensions

www.vishay.com/doc?95525