C&H Technology VS-GB300LH120N - Manual (Page 5)

VS-GB300LH120N
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Vishay Semiconductors
Revision: 14-Mar-13 4 Document Number: 94784
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Fig. 5 - RBSOA
Fig. 6 - IGBT Transient Thermal Impedance
Fig. 7 - Diode Typical Forward Characteristics Fig. 8 - Diode Switching Loss vs. I
F
0
100
200
300
400
500
600
700
0 300 600 900 1200 1500
V
GE
= ± 15 V
T
J
= 125 °C
R
g
= 4.7 Ω
I
C
, Module
V
CE
(V)
I C
(A)
t (s)
Z
thJC
(K/W)
IGBT
10 -3 10 -2 10 -1 10 0 10 1
10 -1
10 -2
10 -3
0
100
200
300
400
500
600
0 0.5 1 1.5 2 3 2.5
V
F
(V)
I F
(A) 125 °C
25 °C
E (mJ)
0
5
10
15
20
25
30
35
40
0 100 200 300 400 500 600
I
F
(A)
E rec
V
GE
= - 15 V
T
J
= 125 °C
V
CC
= 600 V
R
g
= 4.7 Ω