Vishay semiconductors – C&H Technology VSKDS408-060 User Manual
Page 5
VSKDS408/060
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Vishay Semiconductors
Revision: 09-Jan-12
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Document Number: 94643
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F(AV)
-
Average
Forward Current (A)
Allowable
Case
Temperature
(°C)
0
100
200
300
400
500
0
20
40
60
80
100
120
140
160
DC
Square wave (D = 0.50)
80 % rated V
RRM
applied
see note (1)
I
F(AV)
-
Average
Forward Current (A)
Average Power Loss (W)
0 50 100 150 200 250 300
0
50
100
150
200
250
DC
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
RMS limit
I
F
S
M
- Non-Repetitive
S
urge Current (A)
t
p
- Square Wave Pulse Duration (μs)
10
100
1000
10 000
100
1000
10 000
100 000
At Any Rated Load Condition
And With Rated V
RRM
Applied
Following Surge
Current
monitor
High-speed
switch
D.U.T.
R
g
= 25
Ω
+
Freewheel
diode
V
d
= 25 V
L
IRFP460
40HFL40S02