Write_memory_card, Erase_non_application_zone – ACS ACR33U-A1 SmartDuo Smart Card Reader User Manual
Page 55
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ACR33U-A1 – Reference Manual
Version 1.02
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Page 55 of 60
8.3.8.3. WRITE_MEMORY_CARD
To write data to the specified address of the inserted card. The byte is written to the card with LSB
first, e.g., the bit at card address 0 is regarded as the LSB of byte 0.
The byte at the specified card address is not erased prior to the write operation and hence, memory
bits can only be programmed from '1' to '0'.
Command format (abData field in the PC_to_RDR_XfrBlock)
Pseudo-APDU
CLA INS P1 Byte Address MEM_L Byte 1 .... .... Byte N
FFh D0h 00h
Where:
Byte Address = Memory address location of the memory card
MEM_L:
Length of data to be written to the memory card
BYTE:
Byte value to be written to the card
Response data format (abData field in the RDR_to_PC_DataBlock)
SW1 SW2
Where:
SW1, SW2 = 90 00h if no error
8.3.8.4. ERASE_NON_APPLICATION_ZONE
To erase the data in Non-Application Zones. The EEPROM memory is organized into 16 bit words.
Although erases are performed on single bits the ERASE operation clears an entire word in the
memory. Therefore, performing an ERASE on any bit in the word will clear ALL 16 bits of that word to
the state of ‘1’.
To erase Error Counter or the data in Application Zones, please refer to:
•
ERASE_APPLICATION_ZONE_WITH_ERASE command as specified in
Section 8.3.8.5
•
ERASE_APPLICATION_ZONE_WITH_WRITE_AND_ERASE command as specified in
Section 8.3.8.6
•
commands as specified in
Section 8.3.8.7
Command format (abData field in the PC_to_RDR_XfrBlock)
Pseudo-APDU
CLA INS P1 Byte Address MEM_L
FFh D2h 00h
00h
Where:
Byte Address = Memory byte address location of the word to be erased