Philips BGM1012 - Manual (Page 2)

2002 Sep 06 2
NXP Semiconductors Product specification
MMIC wideband amplifier BGM1012
FEATURES
 Internally matched to 50 
 Very wide frequency range (4 GHz at 3 dB bandwidth)
 Very flat 20 dB gain (DC to 2.9 GHz at 1 dB flatness)
 10 dBm saturated output power at 1 GHz
 High linearity (18 dBm IP3
(out)
at 1 GHz)
 Low current (14.6 mA)
 Unconditionally stable.
APPLICATIONS
 LNB IF amplifiers
 Cable systems
 ISM
 General purpose.
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
PINNING
PIN DESCRIPTION
1 V
S
2, 5 GND2
3 RF out
4 GND1
6 RF in
MAM455
1 3 2
4
1
6 3
2, 5 4
5 6
Top view
Fig.1 Simplified outline (SOT363) and symbol.
Marking code: C2-.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
S
DC supply voltage 3 4 V
I
S
DC supply current 14.6

mA
s
21
 2 insertion power gain f = 1 GHz 20.1

dB
NF noise figure f = 1 GHz 4.8

dB
P
L(sat)
saturated load power f = 1 GHz 9.7

dBm
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.