Comtech EF Data LNA - Manual (Page 16)

LNA Low-Noise Amplifier Series Revision 0
Introduction MN/LNAS.IOM
1–2
1.2 TECHNOLOGY
The amplifiers incorporate both HEMT (High Electron Mobility Transistors) devices for Low-
Noise temperature performance and GaAs FET (Gallium Arsenide) devices for low
intermodulation. The unit uses surface mounted components for robotic manufacturing
techniques, thereby insuring maximum product consistency and enhanced reliability.
1.3 RELIABILITY
The Comtech EF Data amplifier series (CLNA and KLNA) utilizes proprietary circuitry and high
quality components to achieve an MTBF (mean time between failures) in excess of 160,000
hours. Each unit is subjected to a 72 hour burn-in and temperature cycled from -40 to 140
°F
(-40 to +60 °C).
1.4 CONSTRUCTION
The LNAs (CLNA and KLNA) are housed in waterproof enclosures with a small profiles to
better accommodate redundancy configurations. The enclosures also provide a pressurizable,
integral waveguide flange.