Rainbow Electronics IRLTS6342TRPBF - Manual (Page 5)

IRLTS6342PbF
www.irf.com 5
Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage
Fig 15. Typical Power vs. Time Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET ® Power MOSFETs
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple ≤ 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+ -
-
-
ƒ
„
‚
R
G
V
DD • dv/dt controlled by R
G
• Driver same type as D.U.T.
• I
SD
controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T

1E-8 1E-7 1E-6 1E-5 1E-4 1E-3
Time (sec)
0
4000
8000
12000
16000
P
ow
er
(
W
)
0 10 20 30 40 50
ID, Drain Current (A)
0
10
20
30
40
50
60
70
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
Vgs = 2.5V
Vgs = 4.5V
25 50 75 100 125 150
Starting TJ , Junction Temperature (°C)
0
10
20
30
40
50
60
70
80
90
100
E
A
S
,
S
in
gl
e
P
ul
se
A
va
la
nc
he
E
ne
rg
y
(m
J)
ID
TOP 0.9A
1.5A
BOTTOM 6.4A
1 2 3 4 5 6 7 8 9 10 11 12
VGS, Gate -to -Source Voltage (V)
5
10
15
20
25
30
35
40
45
R
D
S
(o
n)
,
D
ra
in
-t
o
-S
ou
rc
e
O
n
R
es
is
ta
nc
e
(m
Ω
)
ID = 8.0A
TJ = 25°C
TJ = 125°C