C&H Technology 70MT060WHTAPBF - Manual (Page 5)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94469
4 Revision: 06-May-08
70MT060WHTAPbF
Vishay High Power Products "Half-Bridge" IGBT MTP
(Warp2 Speed IGBT), 70 A
Fig. 1 - Typical Output Characteristics
Fig. 2 - Maximum Collector Current vs.
Case Temperature
Fig. 3 - Typical Collector to Emitter Voltage vs.
Junction Temperature
Fig. 4 - Typical Gate Charge vs.
Gate to Emitter Votlage
Fig. 5 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Fig. 6 - Typical Zero Gate Voltage Collector Current
1
100
10
1000
I C
- Collector to Emitter Current (A)
V
CE
- Collector to Emitter Voltage (V)
1.0 2.0 3.0 4.0 5.0 0.0
T
J
= 25 °C
T
J
= 150 °C
V
GE
= 15 V
100
120
140
160
80
60
40
20
0
Allowable Case Temperature (°C)
Maximum DC Collector Current (A)
20 40 60 80 100 120 0
DC
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
CE
- Collector to Emitter
Volta
g
e (V)
T
J
- Junction Temperature (°C)
20 40 60 80 120 100 140 160
I
c
= 70 A
I
c
= 140 A
I
c
= 30 A
0
2
4
8
6
10
12
14
16
V
GE
- Gate to Emitter Volta
g
e (V)
O
G
- Total Gate Charge (nC)
200 400 600 800 1000 0
V
cc
= 480 V
1
100
10
1000
I F
- Instantaneous
Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0
T
J
= 25 °C
T
J
= 150 °C
0.0001
0.001
0.01
I CE
S
- Collector to Emitter
Current (mA)
V
CES
- Collector to Emitter Voltage (V)
300 400 500 600 200
0.1
1.0
10
150 °C
25 °C