C&H Technology CM100DUS-12F - Manual (Page 4)

3
CM100DUS-12F
Trench Gate Design Dual IGBTMOD™
100 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/2 Module, T c Reference – 0.35 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi 1/2 Module, T
c
Reference – – 0.70 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R th(j-c') Q Per IGBT 1/2 Module, – 0.23** – °C/W
T
c
Reference Point Under Chip
Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.07 – °C/W
** If you use this value, Rth(f-a) should be measured just under the chips.
COLLECTOR-CURRENT, I
C
, (AMPERES)
SWITCHING LOSS
, E
SW
, (mJ/PULSE)
SWITCHING LOSS VS. COLLECTOR CURRENT
(TYPICAL)
10 0 10 1 10 2
10 0
10 -1
10 1
E
SW(on)
E
SW(off)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECT
OR CURRENT
, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 1 2 3 4
120
40
0
V
GE
= 20V
13
8
8.5
7.5
7
80
160
200
9
15
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECT
OR-EMITTER
SA
TURA
TION
V
OL
TA
GE,
V
CE(sat
)
, (V
OL
TS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3.0
0 40 80 120 160
2.5
2.0
1.5
1.0
0.5
0
200
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAP
A
C
IT
ANCE,
C
ie
s
, C
oe
s
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10 -1 10 2
10 2
10 1
10 -1
10 0
V
GE
= 0V
f = 1MHz
C
oes
C
res
C
ies
10 0 10 1 0.5 1.0 1.5 2.0 2.5 3.0
10 0
10 1
10 2
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10 3
EMITTER CURRENT
, I
E
, (AMPERES)
T
j
= 25°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECT
OR-EMITTER
SA
TURA
TION
V
OL
TA
G
E,
V
CE(sat
), (V
OL
TS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
6 8 10 14 12 18 16 20
4
3
2
1
0
T
j
= 25°C
I
C
= 40A
I
C
= 200A
I
C
= 100A
V
CC
= 300V
V
GE
= 15V
R
G
= 6.3 Ω
T
j
= 125C
HALF-BRIDGE
SWITCHING
T
j
= 25°C 9.5
10 11