C&H Technology CM200DX-24S - Manual (Page 6)

CM200DX-24S
Dual IGBTMOD™ NX-S Series Module
200 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
5 06/11 Rev. 2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
10 0 10 2
10 2
10 1
10 0
10 -2
10 -1
10 1 1.0 0.5 2.5 1.5 2.0
10 1
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
10 2
10 3
EMITTER CURRENT, I
E
, (AMPERES)
V
GE
= 0V
C
ies
C
oes
C
res
10 -1
COLLECTOR CURRENT, I
C
, (AMPERES)
10 3
10 1 10 2
10 2
10 1
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 0Ω
T
j
= 125°C
Inductive Load
t
f
10 3
COLLECTOR CURRENT, I
C
, (AMPERES)
10 3
10 1 10 2
10 2
10 1
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 0Ω
T
j
= 150°C
Inductive Load
t
f
10 3
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
EXTERNAL GATE RESISTANCE, R
G
, (Ω)
10 3
10 1
10 2
SWITCHING TIME, (ns) SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
EXTERNAL GATE RESISTANCE, R
G
, (Ω)
10 3
10 1 10 -1 10 0
10 1
10 2
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(YPICAL)
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 150°C
Inductive Load
t
f
10 2 10 1 10 -1 10 0
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
I
C
= 200A
T
j
= 125°C
Inductive Load
t
f
10 2
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
6 8 10 14 12 16 18 20
8
6
4
2
0
T
j
= 25°C
I
C
= 400A
I
C
= 200A
I
C
= 80A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
0 2 4 6 8 10
0
V
GE
= 20V
10
11
12 13.5
15
9
T
j
=
25° C
400
100
200
50
150
250
300
350
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
3.5
2.5
3.0
0
2.0
1.5
0.5
1.0
0
400 300 350 100 200 50 150 250
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C