C&H Technology CM50TU-24H - Manual (Page 3)

94
CM50TU-24H
Six IGBTMOD™ U-Series Module
50 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
94
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM50TU-24H Units
Junction Temperature T
j
-40 to 150
°
C
Storage Temperature T stg -40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT) V
CES
1200 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
± 20 Volts
Collector Current (T
c
= 25 ° C) I
C
50 Amperes
Peak Collector Current (Tj
≤
150
°
C) I
CM
100* Amperes
Emitter Current** I
E
50 Amperes
Peak Emitter Current** I EM 100* Amperes
Maximum Collector Dissipation (T
j
< 150 ° C) P
c
400 Watts
Mounting Torque, M4 Main Terminal – 15 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 570 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate Leakage Voltage I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage V GE(th) I C = 5mA, V CE = 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25 ° C – 2.9 3.7 Volts
I
C
= 50A, V
GE
= 15V, T
j
= 125
°
C – 2.85 – Volts
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 50A, V
GE
= 15V – 187 – nC
Emitter-Collector Voltage* V
EC
I
E
= 50A, V
GE
= 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 7.5 nf
Output Capacitance C oes V CE = 10V, V GE = 0V – – 2.6 nf
Reverse Transfer Capacitance C res – – 1.5 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 50A, – – 80 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 200 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 6.3 ⍀ , Resistive – – 150 ns
Times Fall Time t
f
Load Switching Operation – – 350 ns
Diode Reverse Recovery Time t rr I E = 50A, di E /dt = -100A/
µ
s – – 300 ns
Diode Reverse Recovery Charge Q rr I E = 50A, di E /dt = -100A/
µ
s – 0.28 –
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT 1/6 Module – – 0.31
°
C/W
Thermal Resistance, Junction to Case R
th(j-c)
D Per Free-Wheel Diode 1/6 Module – – 0.7
°
C/W
Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.018 –
°
C/W