C&H Technology 20TT100 - Manual (Page 3)

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2 Revision: 05-Sep-08
20TT100
Vishay High Power Products High Performance
Schottky Generation 5.0, 20 A
Note
(1) Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Forward voltage drop V
FM
(1)
20 A
T
J
= 25 °C
- 0.8
V
40 A - 0.95
20 A
T
J
= 125 °C
- 0.67
40 A - 0.8
Reverse leakage current I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
- 150 µA
T
J
= 125 °C - 6 mA
Junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 850 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body 8.0 - nH
Maximum voltage rate of change dV/dt Rated V
R
- 10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 55 to 175 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 2
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.5
Approximate weight
2 g
0.07 oz.
Mounting torque
minimum 6 (5) kgf · cm
(lbf · in) maximum 12 (10)
Marking device Case style TO-220AC 20TT100