3thermal and mechanical characteristics, t, 25 ° c unless otherwise specified – C&H Technology CM200DU-34KA User Manual
Page 4
3
CM200DU-34KA
Dual IGBTMOD™ KA-Series Module
200 Amperes/1700 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
3
Thermal and Mechanical Characteristics,
T
j
= 25
°
C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module
–
–
0.11
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
R
Per FWDi 1/2 Module
–
–
0.18
°
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
–
0.020
–
°
C/W
Thermal Resistance
R
th(j-c')
Q
T
c
Measured Point
–
–
0.05*
°
C/W
(Under Chips - IGBT Part)
* If you use this value, R
th(f-a)
should be measured just under the chips.
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0
2
4
6
8
10
200
0
15
14
12
11
8
T
j
= 25
o
C
100
300
400
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
0
5
10
15
20
200
100
0
400
300
V
CE
= 10V
T
j
= 25
°
C
T
j
= 125
°
C
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
6
5
0
100
200
4
3
2
1
0
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
300
400
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
0
4
8
12
16
20
8
6
4
2
0
T
j
= 25
°
C
I
C
= 80A
I
C
= 400A
I
C
= 200A
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
1
10
0
10
2
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
V
GE
= 20V
1
2
3
4
5
10
0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
1
10
2
10
3
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25
°
C