C&H Technology CM150DU-24H - Manual (Page 3)

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CM150DU-24H
Dual IGBTMOD™ U-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM150DU-24H Units
Junction Temperature T
j
-40 to 150 ° C
Storage Temperature T
stg
-40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT) V CES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) V GES
±
20 Volts
Collector Current (T
c
= 25 ° C) I
C
150 Amperes
Peak Collector Current (T
j
≤ 150 ° C) I
CM
300* Amperes
Emitter Current** (T
c
= 25
°
C) I
E
150 Amperes
Peak Emitter Current** I
EM
300* Amperes
Maximum Collector Dissipation (T c = 25
°
C) P c 890 Watts
Mounting Torque, M6 Main Terminal – 40 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate Leakage Voltage I
GES
V
GE
= V
GES
, V
CE
= 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 15mA, V
CE
= 10V 4.5 6 7.5 Volts
Collector-Emitter Saturation Voltage V CE(sat) I C = 150A, V GE = 15V, T j = 25
°
C – 2.9 3.7 Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125 ° C – 2.85 – Volts
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 150A, V
GE
= 15V – 560 – nC
Emitter-Collector Voltage* V
EC
I
E
= 150A, V
GE
= 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 22 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 7.4 nf
Reverse Transfer Capacitance C
res
– – 4.4 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 150A, – – 200 ns
Load Rise Time t r V GE1 = V GE2 = 15V, – – 250 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 2.1 ⍀ , Resistive – – 300 ns
Times Fall Time t
f
Load Switching Operation – – 350 ns
Diode Reverse Recovery Time t
rr
I
E
= 150A, di
E
/dt = -300A/
µ
s – – 300 ns
Diode Reverse Recovery Charge Q
rr
I
E
= 150A, di
E
/dt = -300A/
µ
s – 0.82 –
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
th(j-c)
Q Per IGBT 1/2 Module – – 0.14 ° C/W
Thermal Resistance, Junction to Case R
th(j-c)
D Per FWDi 1/2 Module – – 0.24 ° C/W
Contact Thermal Resistance R
th(c-f)
Per Module, Thermal Grease Applied – 0.020 –
°
C/W
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