C&H Technology CM1200HA-24J - Manual (Page 3)

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CM1200HA-24J
Single IGBTMOD™ H-Series Module
1200 Amperes/1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM1200HA-24J Units
Junction Temperature T
j
–40 to +150 ° C
Storage Temperature T
stg
–40 to +125
°
C
Collector-Emitter Voltage (G-E SHORT) V
CES
1200 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±
20 Volts
Collector Current (T c = 25
°
C) I C 1200 Amperes
Peak Collector Current (T
j
≤ 150 ° C) I
CM
2400* Amperes
Emitter Current** (T
c
= 25 ° C) I
E
1200 Amperes
Peak Emitter Current** (T
j
≤
150
°
C) I
EM
2400* Amperes
Maximum Collector Dissipation (T
c
= 25
°
C) (T
j
< 150
°
C) P
c
5800 Watts
Max. Mounting Torque M8 Terminal Screws – 95 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in -lb
Mounting Torque G(E) Terminal M4 – 15 in-lb
Module Weight (Typical) – 1600 Grams
Isolation Voltage, Main Terminal to Base Plate, AC 1 Min. V
iso
2500 Volts
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I CES V CE = V CES , V GE = 0V – – 6 mA
Gate Leakage Current I
GES
V
GE
= V
CES
, V
CE
= 0V – – 0.5 µ A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 120mA, V
CE
= 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 1200A, V
GE
= 15V, T
j
= 25
°
C – 2.4 3.1 Volts
I
C
= 1200A, V
GE
= 15V, T
j
= 125
°
C – 2.5 – Volts
Total Gate Charge Q G V CC = 600V, I C = 1200A, V GE = 15V – 5000 – nC
Emitter Current Voltage** V EC I E = 1200A, V GE = 0V – – 3.7 Volts
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 200 nF
Output Capacitance C oes V GE = 0V, V CE = 10V – – 70 nF
Reverse Transfer Capacitance C
res
– – 40 nF
Resistive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 1200A, – – 600 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 1800 ns
Switching Turn-off Delay Time t
d(off)
R
G
= 3.3
Ω
, Resistive – – 1200 ns
Time Fall Time t
f
Load Switching Operation – – 1500 ns
Diode Reverse Recovery Time** t rr I E = 1200A, di E /dt = –2400A/
µ
s – – 300 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 1200A, di
E
/dt = –2400A/ µ s – 9.0 – µ C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case** R
th(j-c)
Q Per IGBT – – 0.022
°
C/W
Thermal Resistance, Junction to Case** R
th(j-c)
R Per FWDi – – 0.050
°
C/W
Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.018
°
C/W
* Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).