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Trench gate design dual igbtmod – C&H Technology CM300DU-24F User Manual

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Trench Gate Design
Dual IGBTMOD™

300 Amperes/1200 Volts

CM300DU-24F

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Outline Drawing and Circuit Diagram

1

Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a half-
bridge configuration with each tran-
sistor having a reverse-connected
super-fast recovery free-wheel
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.

Features:

Low Drive Power

Low V

CE(sat)

Discrete Super-Fast Recovery
Free-Wheel Diode

Isolated Baseplate for Easy
Heat Sinking

Applications:

AC Motor Control

UPS

Battery Powered Supplies

Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM300DU-24F is a
1200V (V

CES

), 300 Ampere Dual

IGBTMOD™ Power Module.

Current Rating

V

CES

Type

Amperes

Volts (x 50)

CM

300

24

N

P

G2

E2

C1

G1

E1

E2

RTC

RTC

C2E1

G1

G2

E2

E1

C1

E2

C2E1

25

25

L

C

CM

LABEL

V - THICK x W - WIDE
TAB (4 PLACES)

T - (4 TYP.)

X

R

H

H

J

Q

Q

K

K

K

M

F

G

F

E

D

C

B

A

S - NUTS
(3 TYP)

TC Measured

Point

Dimensions

Inches

Millimeters

A

4.33

110.0

B

3.15

80.0

C

1.14 +0.04/-0.02 29.0 +1.0/-0.5

D

3.66

±

0.01

93.0

±

0.25

E

2.44

±

0.01

62.0

±

0.25

F

0.83

21.0

G

0.16

4.0

H

0.24

6.0

J

0.59

15.0

K

0.55

14.0

Dimensions

Inches

Millimeters

M

0.33

8.5

N

0.10

2.5

P

0.85

21.5

Q

0.98

25.0

R

0.86

21.75

S

M6

M6

T 0.26 Dia. 6.5 Dia.

V

0.02

0.5

W

0.110

2.79

X

1.08

27.35