Performance curves, Mitsubishi hvigbt modules – C&H Technology CM1200HA-34H User Manual
Page 4
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
1600
2000
2400
800
400
0
10
0
2
4
6
8
1200
1600
2000
2400
800
400
0
1200
20
0
4
8
12
16
0
5
4
3
1
2
0
400
800
1200 1600 2000 2400
0
20
16
12
8
4
10
8
6
4
2
0
T
j
= 25
°
C
T
j
= 25
°
C
V
GE
= 13V
V
GE
= 11V
V
GE
= 12V
V
GE
= 10V
V
GE
= 9V
V
GE
= 8V
V
GE
= 7V
V
GE
= 14V
V
GE
= 15V
V
GE
= 20V
I
C
= 2400A
I
C
= 1200A
I
C
= 480A
V
CE
= 10V
V
GE
= 15V
T
j
= 25
°
C
T
j
= 125
°
C
T
j
= 25
°
C
T
j
= 125
°
C
10
1
2 3
10
–1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
C
ies
C
oes
C
res
V
GE
= 0V, T
j
= 25
°
C
C
ies,
C
oes
: f = 100kHz
C
res
: f = 1MHz
CAPACITANCE CHARACTERISTICS
(TYPICAL)
CAPACITANCE C
ies
, C
oes
, C
res
(
nF
)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
TRANSFER CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT I
C
(
A
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CE(sat)
(
V
)
GATE-EMITTER VOLTAGE V
GE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE V
EC
(
V
)
EMITTER CURRENT I
E
(A)
0
2400
1200 1600 2000
800
400
5
4
3
2
1
0
T
j
= 25
°
C
T
j
= 125
°
C