8tt100, Vishay high power products, High performance schottky generation 5.0, 8 a – C&H Technology 8TT100 User Manual
Page 3

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Document Number: 94536
2
Revision: 05-Sep-08
8TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 8 A
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
TYP.
MAX.
UNITS
Forward voltage drop
V
FM
(1)
8 A
T
J
= 25 °C
-
0.72
V
16 A
-
0.85
8 A
T
J
= 125 °C
-
0.58
16 A
-
0.69
Reverse leakage current
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
-
65
µA
T
J
= 125 °C
-
4
mA
Junction capacitance
C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C
520
-
pF
Series inductance
L
S
Measured lead to lead 5 mm from package body
8.0
-
nH
Maximum voltage rate of change
dV/dt
Rated V
R
-
10 000
V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 55 to 175
°C
Maximum thermal resistance,
junction to case
R
thJC
DC
operation
2
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased
0.5
Approximate weight
2
g
0.07
oz.
Mounting torque
minimum
6 (5)
kgf · cm
(lbf · in)
maximum
12 (10)
Marking device
Case style TO-220AC
8TT100