C&H Technology CM200TU-5F - Manual (Page 3)

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CM200TU-5F
Trench Gate Design Six IGBTMOD™
200 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM200TU-5F Units
Junction Temperature T j -40 to 150
°
C
Storage Temperature T
stg
-40 to 125 ° C
Collector-Emitter Voltage (G-E SHORT) V
CES
250 Volts
Gate-Emitter Voltage (C-E SHORT) V
GES
±
20 Volts
Collector Current (T
c
= 25
°
C) I
C
200 Amperes
Peak Collector Current (T
j
≤
150
°
C) I
CM
400* Amperes
Emitter Current** I E 200 Amperes
Peak Emitter Current** I
EM
400* Amperes
Maximum Collector Dissipation (T
j
< 150 ° C) P
c
600 Watts
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M5 Mounting – 31 in-lb
Weight – 680 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
iso
2500 Volts
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V – – 1 mA
Gate Leakage Voltage I
GES
V
GE
= V
CES
, V
CE
= 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage V GE(th) I C = 20mA, V CE = 10V 3.0 4.0 5.0 Volts
Collector-Emitter Saturation Voltage V CE(sat) I C = 200A, V GE = 10V, T j = 25
°
C – 1.2 1.7 Volts
I
C
= 200A, V
GE
= 10V, T
j
= 125 ° C – 1.1 – Volts
Total Gate Charge Q
G
V
CC
= 100V, I
C
= 200A, V
GE
= 10V – – nC
Emitter-Collector Voltage** V
EC
I
E
= 200A, V
GE
= 0V – – 2.0 Volts
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
– – 66 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 3.0 nf
Reverse Transfer Capacitance C
res
– – 2.3 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 100V, I
C
= 200A, – – 700 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 10V, – – 1800 ns
Switch Turn-off Delay Time t
d(off)
R
G
= 13 ⍀ , Resistive – – 700 ns
Times Fall Time t
f
Load Switching Operation – – 500 ns
Diode Reverse Recovery Time** t
rr
I
E
= 200A, di
E
/dt = -400A/ µ s – – 300 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 200A, di
E
/dt = -400A/
µ
s – –
µ
C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/6 Module – – 0.21
°
C/W
Thermal Resistance, Junction to Case R
th(j-c)
R Per Free-Wheel Diode 1/6 Module – – 0.47 ° C/W
Contact Thermal Resistance R
th(c-f)
Per 1/6 Module, Thermal Grease Applied – 0.09 – ° C/W
* Pulse width and repetition rate should be such that the device junction temperature (T j ) does not exceed T j(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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