Mitsubishi hvigbt modules – C&H Technology CM400DY-50H User Manual
Page 5
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM400DY-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
4000
3000
0
1000
2000
7
5
3
2
7 10
2
10
–1
7
2 3
5 7 10
3
2 3
5
5
3
2
10
0
5
7
5
3
2
7 10
2
10
–1
7
2 3
5 7 10
3
2 3
5
5
5
3
2
10
0
5
t
d(off)
V
CC
= 1250V, V
GE
=
±
15V
R
G
= 7.5
Ω
, T
j
= 125
°
C
Inductive load
t
d(on)
t
r
t
f
V
CC
= 1250V, T
j
= 125
°
C
Inductive load
V
GE
=
±
15V, R
G
= 7.5
Ω
t
rr
I
rr
7
5
3
2
10
1
7
5
3
2
10
2
10
1
10
3
10
–2
10
–3
10
–2
10
–1
10
0
7
5
3
2
10
–1
7
5
3
2
10
0
10
1
7
5
3
2
2 3 5 7
2 3 5 7
2 3 5 7
Single Pulse
T
C
= 25
°
C
R
th(j – c)Q
= 0.036K/ W
R
th(j – c)R
= 0.072K/ W
(Per 1/2 module)
20
16
12
8
4
0
V
CC
= 1250V
I
C
= 400A
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING TIMES
(
µ
s
)
COLLECTOR CURRENT I
C
(A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
REVERSE RECOVERY TIME t
rr
(
µ
s
)
EMITTER CURRENT I
E
(A)
REVERSE RECOVERY CURRENT I
rr
(
A
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Z
th(j
–
c)
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE V
GE
(
V
)
GATE CHARGE Q
G
(nC)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
5
10
15
20
30
25
GATE RESISTANCE (
Ω
)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
SWITCHING ENERGY
( J/P
)
0
0.2
0.4
0.6
0.8
1.0
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
CURRENT (A)
SWITCHING ENERGY
( J/P
)
0
100
200
500
400
300
V
CC
= 1250V, V
GE
=
±
15V,
R
G
= 7.5
Ω
, Tj = 125
°
C,
Inductive load
E
on
E
off
E
rec