C&H Technology CM400DU-5F User Manual
Page 3

2
CM400DU-5F
Trench Gate Design Dual IGBTMOD™
400 Amperes/250 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings,
T
j
= 25 °C unless otherwise specified
Ratings
Symbol
CM400DU-5F
Units
Junction Temperature
T
j
-40 to 150
°
C
Storage Temperature
T
stg
-40 to 125
°
C
Collector-Emitter Voltage (G-E SHORT)
V
CES
250
Volts
Gate-Emitter Voltage (C-E SHORT)
V
GES
±
20
Volts
Collector Current (T
c
= 25
°
C)
I
C
400
Amperes
Peak Collector Current (T
j
≤
150
°
C)
I
CM
800*
Amperes
Emitter Current** (T
c
= 25
°
C)
I
E
400
Amperes
Peak Emitter Current**
I
EM
800*
Amperes
Maximum Collector Dissipation (T
c
= 25
°
C)
P
c
890
Watts
Mounting Torque, M6 Main Terminal
–
40
in-lb
Mounting Torque, M6 Mounting
–
40
in-lb
Weight
–
400
Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
V
iso
2500
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Collector-Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
–
–
1.0
mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V
–
–
0.5
µ
A
Gate-Emitter Threshold Voltage
V
GE(th)
I
C
= 40mA, V
CE
= 10V
3.0
4.0
5.0
Volts
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
= 400A, V
GE
= 10V, T
j
= 25
°
C
–
1.2
1.7
Volts
I
C
= 400A, V
GE
= 10V, T
j
= 125
°
C
–
1.1
–
Volts
Total Gate Charge
Q
G
V
CC
= 100V, I
C
= 400A, V
GE
= 10V
–
1500
–
nC
Emitter-Collector Voltage*
V
EC
I
E
= 400A, V
GE
= 0V
–
–
2.0
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
Dynamic Electrical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Input Capacitance
C
ies
–
–
110
nf
Output Capacitance
C
oes
V
CE
= 10V, V
GE
= 0V – – 7.0 nf
Reverse Transfer Capacitance
C
res
–
–
3.8
nf
Resistive
Turn-on Delay Time
t
d(on)
V
CC
= 100V, I
C
= 400A,
–
–
850
ns
Load
Rise Time
t
r
V
GE1
= V
GE2
= 10V,
–
–
400
ns
Switch
Turn-off Delay Time
t
d(off)
R
G
= 6.3
⍀
, Resistive
–
–
1100
ns
Times
Fall Time
t
f
Load Switching Operation
–
–
500
ns
Diode Reverse Recovery Time
t
rr
I
E
= 400A
–
–
300
ns
Diode Reverse Recovery Charge
Q
rr
I
E
= 400A
–
16.0
–
µ
C
Thermal and Mechanical Characteristics,
T
j
= 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
R
th(j-c)
Q
Per IGBT 1/2 Module
–
–
0.14
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c)
D
Per FWDi 1/2 Module
–
–
0.24
°
C/W
Thermal Resistance, Junction to Case
R
th(j-c´)
Q
Per IGBT 1/2 Module*
–
–
0.08
°
C/W
Contact Thermal Resistance
R
th(c-f)
Per Module, Thermal Grease Applied
–
0.04
–
°
C/W
* T
C
measured point is just under chip.
2