C&H Technology CM150TX-24S - Manual (Page 3)

CM150TX-24S
Six IGBTMOD™ NX-S Series Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2 07/11 Rev. 2
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (V
GE
= 0V) V
CES
1200 Volts
Gate-Emitter Voltage (V
CE
= 0V) V
GES
±20 Volts
Collector Current (DC, T
C
= 120°C) *2,*3 I
C
150 Amperes
Collector Current (Pulse) *4 I
CRM
300 Amperes
Total Power Dissipation (T
C
= 25°C) *2,*3 P
tot
1150 Watts
Emitter Current (T
C
= 25°C) *2,*3 I
E
*1 150 Amperes
Emitter Current (Pulse) *4 I
ERM
*1 300 Amperes
Module
Characteristics Symbol Rating Units
Maximum Junction Temperature T
j(max)
175 °C
Maximum Case Temperature *2 T
C(max)
125 °C
Operating Junction Temperature T
j(op)
-40 to +150 °C
Storage Temperature T
stg
-40 to +125 °C
Isolation Voltage (Terminals to Baseplate, f = 60Hz, AC 1 minute) V
ISO
2500 Volts
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Junction temperature (T j ) should not increase beyond maximum junction
temperature (T j(max) ) rating.
*4 Pulse width and repetition rate should be such that device junction temperature (T j )
does not exceed T j(max) rating.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
18.4 19.9
30.6
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N: IGBT Di*P / Di*N: FWDi Th: NTC Thermistor
20.4 0 33.9 51
.4
64.9 82.4 95.9
29.2
24.1
104.5
Di
UP
Di
VP
Di
WP
Tr
UP
Tr
VP
Tr
WP
Di
UN
Di
VN
Di
WN
Tr
UN
Tr
VN
Tr
WN
Th