C&H Technology CM200DY-24A - Manual (Page 3)

CM200DY-24A
Dual IGBTMOD™ A-Series Module
200 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2 Rev. 08/09
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM200DY-24A Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (DC, TC = 86°C*) IC 200 Amperes
Peak Collector Current ICM 400** Amperes
Emitter Current*** (TC = 25°C) IE 200 Amperes
Peak Emitter Current*** IEM 400** Amperes
Maximum Collector Dissipation (TC = 25°C*, Tj ≤ 150°C) PC 1340 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 2.1 3.0 Volts
IC = 200A, VGE = 15V, Tj = 125°C — 2.4 — Volts
Total Gate Charge QG VCC = 600V, IC = 200A, VGE = 15V — 1000 — nC
Emitter-Collector Voltage** VEC IE = 200A, VGE = 0V — — 3.8 Volts
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies — — 35 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 3 nf
Reverse Transfer Capacitance Cres — — 0.68 nf
Inductive Turn-on Delay Time td(on) — — 130 ns
Load Rise Time tr VCC = 600V, IC = 200A, — — 100 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 1.6Ω, — — 450 ns
Time Fall Time tf Inductive Load — — 350 ns
Diode Reverse Recovery Time*** trr Switching Operation, — — 150 ns
Diode Reverse Recovery Charge*** Qrr IE = 200A — 9.0 — µC
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).