C&H Technology CM1200DB-34N - Manual (Page 3)

CM1200DB-34N
Dual IGBTMOD™ HVIGBT Module
1200 Amperes/1700 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2 01/11 Rev. 0
Absolute Maximum Ratings, T
j
= 25 °C unless otherwise specified
Ratings Symbol CM1200DB-34N Units
Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Operating Temperature T
opr
-40 to 125 °C
Collector-Emitter Voltage (V
GE
= 0V) V
CES
1700 Volts
Gate-Emitter Voltage (V
CE
= 0V) V
GES
±20 Volts
Collector Current (DC, T
c
= 80°C) I
C
1200 Amperes
Peak Collector Current (Pulse) I
CM
* 1 2400 Amperes
Emitter Current (T
c
= 25°C)* 2 I
E
1200 Amperes
Emitter Surge Current (Pulse)* 2 I
EM
* 1 2400 Amperes
Maximum Power Dissipation (T
c
= 25°C, IGBT Part)* 3 P
C
6900 Watts
Max. Mounting Torque M8 Main Terminal Screws – 177 in-lb
Max. Mounting Torque M6 Mounting Screws – 53 in-lb
Max. Mounting Torque M4 Auxiliary Terminal Screws – 27 in-lb
Module Weight (Typical) – 1.3 kg
Isolation Voltage (RMS, Sinusoidal, f = 60Hz, t = 1 min.) V
iso
4000 Volts
Maximum Short Circuit Pulse Width t
psc
10 µs
(V
CC
= 1200V, V
CES
≤ 1700V, V
GE
= 15V, T
j
= 125°C)
*1 Pulse width and repetition rate should be such that device junction temperature (T j ) does not exceed T opr(max) rating (125°C).
*2 Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*3 Junction temperature (T
j ) should not exceed T j(max) rating (150°C).