C&H Technology CM200DY-12H - Manual (Page 3)

CM200DY-12H
Dual IGBTMOD™ H-Series Module
200 Amperes/600 Volts
2 05/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DY-12H Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage VGES ±20 Volts
Collector Current IC 200 Amperes
Peak Collector Current ICM 400* Amperes
Diode Forward Current IF 200 Amperes
Diode Forward Surge Current IFM 400* Amperes
Power Dissipation Pd 780 Watts
Mounting Torque, M5 Terminal Screws — 17 in-lb
Mounting Torque, M6 Mounting Screws — 26 in-lb
Module Weight (Typical) — 270 Grams
V Isolation VRMS 2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V — 2.1 2.8** Volts
IC = 200A, VGE = 15V, Tj = 150°C — 2.15 — Volts
Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 600 — nC
Diode Forward Voltage VFM IE = 200A, VGE = 0V — — 2.8 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies — — 20 nF
Output Capacitance Coes VGE = 0V, VCE = 10V — — 7 nF
Reverse Transfer Capacitance Cres — — 4 nF
Inductive Turn-on Delay Time td(on) — — 200 ns
Load Rise Time tr VCC = 300V, IC = 200A, — — 550 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 3.1Ω — — 300 ns
Time Fall Time tf — — 300 ns
Diode Reverse Recovery Time trr IE = 200A, diE/dt = -400/µs — — 110 ns
Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = -400/µs — 0.54 — µC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT — — 0.16 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi — — 0.35 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied — — 0.065 °C/W