C&H Technology CM100RX-12A - Manual (Page 5)

CM100RX-12A
Six IGBTMOD™ + Brake NX-Series Module
100 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
4 Rev. 3/09
Electrical and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Brake Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 5mA 5 6 7 Volts
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 50A, V
GE
= 15V, T
j
= 25°C *5 — 1.7 2.1 Volts
I
C
= 50A, V
GE
= 15V, T
j
= 125°C *5 — 1.9 — Volts
I
C
= 50A, V
GE
= 15V, Chip — 1.6 — Volts
Input Capacitance C
ies
— — 9.3 nF
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 1.0 nF
Reverse Transfer Capacitance C
res
— — 0.3 nF
Total Gate Charge Q
G
V
CC
= 300V, I
C
= 50A, V
GE
= 15V — 200 — nC
Repetitive Reverse Current I
RRM
*2 V
R
= V
RRM
— — 1.0 mA
Forward Voltage Drop V
FM
*2 I
F
= 50A, T
j
= 25°C *5 — 2.0 2.8 Volts
I
F
= 50A, T
j
= 125°C *5 — 1.95 — Volts
I
F
= 50A, Chip — 1.9 — Volts
Thermal and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case** R
th(j-c)
Q Per IGBT *1 — — 0.44 °C/W
Thermal Resistance, Junction to Case** R
th(j-c)
D Per FWDi *1 — — 0.85 °C/W
Contact Thermal Resistance** R
th(j-f)
Case to Heatsink (Per 1 Module) — 0.015 — °C/W
Thermal Grease Applied *1*7
Internal Gate Resistance R
Gint
T
C
= 25°C — 0 — Ω
External Gate Resistance R
G
13 — 125 Ω
NTC Thermistor Sector, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R T
C
= 25°C *1 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R T
C
= 100°C, R
100
= 493Ω *1 –7.3 — +7.8 %
B Constant B
(25/50)
B = (InR
1
– InR
2
) / (1/T
1
– 1/T
2
) *6 — 3375 — K
Power Dissipation P
25
T
C
= 25°C *1 — — 10 mW
**Thermal resistance values are per 1 element.
*1 Case temperature (T
C
) and heatsink temperature (T
f
) are defined on the surface of the baseplate and heatsink at just under the chip.
*2 I
E
, I
EM
, V
EC
, t
rr
and Q
rr
represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
I
F
, I
FM
, I
RRM
, V
FM
and V
RRM
represent ratings and characteristics of the clamp diode.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].