C&H Technology CM150DY-24NF - Manual (Page 3)

2
CM150DY-24NF
Dual IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings Symbol CM150DY-24NF Units
Junction Temperature T
j
–40 to 150 ° C
Storage Temperature T
stg
–40 to 125
°
C
Collector-Emitter Voltage (G-E Short) V
CES
1200 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±
20 Volts
Collector Current *** ( DC, T C ' = 110
°
C) I C 150 A mperes
Peak Collector Current I
CM
300* Amperes
Emitter Current** (T
C
= 25 ° C) I
E
150 Amperes
Peak Emitter Current** I
EM
300* Amperes
Maximum Collector Dissipation (T
C
= 25
°
C, T
j
≤
150
°
C) P
C
780 Watts
Mounting Torque, M5 Main Terminal — 30 in-lb
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
ISO
2500 Volts
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate Leakage Current I
GES
V
GE
= V
GES
, V
CE
= 0V — — 0.5
µ
A
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 15mA, V
CE
= 10V 6.0 7.0 8.0 Volts
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 150A, V
GE
= 15V, T
j
= 25 ° C — 1.8 2.5 Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125 ° C — 2.0 — Volts
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 150A, V
GE
= 15V — 1000 — nC
Emitter-Collector Voltage** V
EC
I
E
= 150A, V
GE
= 0V — — 3.2 Volts
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
ies
— — 35 nf
Output Capacitance C oes V CE = 10V, V GE = 0V — — 3 nf
Reverse Transfer Capacitance C
res
— — 0.68 nf
Inductive Turn-on Delay Time t
d(on)
— — 120 ns
Load Rise Time t
r
V
CC
= 600V, I
C
= 150A, — — 80 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, R
G
= 2.1
Ω
, — — 450 ns
Time Fall Time t
f
Inductive Load — — 350 ns
Diode Reverse Recovery Time** t rr Switching Operation, — — 150 ns
Diode Reverse Recovery Charge** Q
rr
I
E
= 150A — 7.5 — µ C
*Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents character i stics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi)
*** Tc' measured point is just under the chips. If this value is used, Rth(f-a) should be measured just under the chips