C&H Technology CM150TL-24NF - Manual (Page 3)

CM150TL-24NF
Six IGBTMOD™ NF-Series Module
150 Amperes/1200 Volts
2 01/10 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Characteristics Symbol CM150TL-24NF Units
Power Device Junction Temperature T
j
-40 to 150 °C
Storage Temperature T
stg
-40 to 125 °C
Collector-Emitter Voltage (G-E Short) V
CES
1200 Volts
Gate-Emitter Voltage (C-E Short) V
GES
±20 Volts
Collector Current (DC, T
C
= 76°C)* 4 I
C
150 Amperes
Peak Collector Current (Pulse, Repetitive)* 2 I
CM
300 Amperes
Emitter Current (DC, T
C
= 25°C)* 4 I
E
* 1 150 Amperes
Peak Emitter Current (Pulse, Repetitive)* 2 I
EM
* 1 300 Amperes
Maximum Collector Dissipation (T
C
= 25°C)* 2, * 4 P
C
890 Watts
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M5 Main Terminal Screws — 31 in-lb
Module Weight (Typical) — 750 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal V
ISO
2500 Volts
Electrical and Mechanical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current I
CES
V
CE
= V
CES
, V
GE
= 0V — — 1.0 mA
Gate-Emitter Threshold Voltage V
GE(th)
I
C
= 15mA, V
CE
= 10V 6 7 8 Volts
Gate Leakage Current I
GES
±V
GE
= V
GES
, V
CE
= 0V — — 0.5 µA
Collector-Emitter Saturation Voltage V
CE(sat)
I
C
= 150A, V
GE
= 15V, T
j
= 25°C* 3 — 2.1 3.0 Volts
I
C
= 150A, V
GE
= 15V, T
j
= 125°C* 3 — 2.4 — Volts
Forward Transfer Admittance |y
fs
| I
C
= 150A, V
CE
= 10V* 3 45 — — sec
Input Capacitance C
ies
— — 23.0 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V — — 2.0 nf
Reverse Transfer Capacitance C
res
— — 0.45 nf
Total Gate Charge Q
G
V
CC
= 600V, I
C
= 150A, V
GE
= 15V — 675 — nC
Inductive Turn-on Delay Time t
d(on)
— — 130 ns
Load Turn-on Rise Time t
r
V
CC
= 600V, I
C
= 150A, — — 70 ns
Switch Turn-off Delay Time t
d(off)
V
GE1
= V
GE2
= 15V, — — 400 ns
Time Turn-off Fall Time t
f
R
G
= 2.1Ω, I
E
= 150A, — — 350 ns
Reverse Recovery Time* 1 t
rr
Inductive Load Switching Operation — — 150 ns
Reverse Recovery Charge* 1 Qrr — 5.8 — µC
Emitter-Collector Voltage* 1 V
EC
I
E
= 150A, V
GE
= 0V — — 3.8 Volts
*1 I
E , I EM , V EC , t rr , and Q rr represent characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*2 Pulse width and repetition rate should be such that device junction temperature (T
j
) does not exceed T
j(max)
rating.
*3 Pulse width and repetition rate should be such as to cause negligible temperature rise.
*4 T
C measured point is just under the chips.