50ria series, Vishay high power products, Medium power thyristors (stud version), 50 a – C&H Technology 50RIA Series User Manual
Page 3: Electrical specifications, Voltage ratings, Absolute maximum ratings

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Document Number: 93711
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Revision: 19-Sep-08
50RIA Series
Vishay High Power Products
Medium Power Thyristors
(Stud Version), 50 A
ELECTRICAL SPECIFICATIONS
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
(2)
For voltage pulses with t
p
≤ 5 ms
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
DRM
/V
RRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
(1)
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
(2)
V
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
50RIA
10
100
150
15
20
200
300
40
400
500
60
600
700
80
800
900
100
1000
1100
120
1200
1300
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum average on-state current
at case temperature
I
T(AV)
180° sinusoidal conduction
50
A
94
°C
Maximum RMS on-state current
I
T(RMS)
80
A
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
1430
A
t = 8.3 ms
1490
t = 10 ms
100 % V
RRM
reapplied
1200
t = 8.3 ms
1255
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
10.18
kA
2
s
t = 8.3 ms
9.30
t = 10 ms
100 % V
RRM
reapplied
7.20
t = 8.3 ms
6.56
Maximum I
2
√t for fusing
I
2
√t
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
101.8
kA
2
√s
Low level value of threshold voltage
V
T(TO)1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
0.94
V
High level value of threshold voltage
V
T(TO)2
(
π x I
T(AV)
< I < 20 x
π x I
T(AV)
), T
J
= T
J
maximum
1.08
Low level value of on-state
slope resistance
r
t1
(16.7 % x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
maximum
4.08
m
Ω
High level value of on-state
slope resistance
r
t2
(
π x I
T(AV)
< I < 20 x
π x I
T(AV)
), T
J
= T
J
maximum
3.34
Maximum on-state voltage
V
TM
I
pk
= 157 A, T
J
= 25 °C
1.60
V
Maximum holding current
I
H
T
J
= 25 °C, anode supply 22 V, resistive load,
initial I
T
= 2 A
200
mA
Latching current
I
L
Anode supply 6 V, resistive load
400