Vishay semiconductors – C&H Technology VS-GB200TH120U User Manual
Page 2
VS-GB200TH120U
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
1
Document Number: 94754
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 200 A
FEATURES
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low switching losses
• Rugged with ultrafast performance
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Switching mode power supplies
• Inductive heating
• Electronic welder
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as electronic welder and inductive
heating.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
200 A
V
CE(on)
(typical)
at I
C
= 200 A, 25 °C
3.10 V
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
330
A
T
C
= 80 °C
200
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
400
Diode continuous forward current
I
F
T
C
= 80 °C
200
Diode maximum forward current
I
FM
t
p
= 1 ms
400
Maximum power dissipation
P
D
T
J
= 150 °C
1316
W
Short circuit withstand time
t
SC
T
J
= 125 °C
10
μs
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V