Vishay semiconductors – C&H Technology VS-UFB280FA40 User Manual
Page 5
VS-UFB280FA40
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Vishay Semiconductors
Revision: 04-Nov-11
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Document Number: 93458
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
0
Allo
wab
le Case
T
emperature (°C)
I
F(AV)
- Average Forward Current (A)
175
100
DC
75
40
120
280
25
50
80
160
125
150
200
240
0
Square wave (D = 0.5)
80 % rated V
R
applied
See note
(1)
Forwar
d P
o
wer Loss (W)
I
F(AV)
- Average Forward Current (A)
0
50
100
150
200
250
300
350
0
50
100
150
200
250
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
100
1000
t
rr
(ns)
dI
F
/dt (A/µs)
100
200
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
150
250
50
I
F
= 150 A
I
F
= 75 A
100
1000
Q
rr
(nC)
dI
F
/dt (A/µs)
1000
5000
3500
V
R
= 200 V
T
J
= 125 °C
T
J
= 25 °C
2500
4000
0
500
1500
3000
2000
4500
I
F
= 150 A
I
F
= 75 A