Vishay semiconductors, Thermal and mechanical specifications – C&H Technology VS-GB600AH120N User Manual
Page 4
VS-GB600AH120N
www.vishay.com
Vishay Semiconductors
Revision: 27-May-13
3
Document Number: 94791
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Fig. 1 - Typical Output Characteristics
Fig. 2 - Typical Transfer Characteristics
Fig. 3 - Switching Loss vs. Collector Current
Fig. 4 - Switching Loss vs. Gate Resistor
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
°C
Junction to case
per module
IGBT
R
thJC
-
-
0.04
K/W
Diode
-
-
0.09
Case to sink
R
thCS
Conductive grease applied
-
0.035
-
Mounting torque
Power terminal screw: M6
2.5 to 5.0
Nm
Mounting screw: M6
3.0 to 6.0
Weight
310
g
0
0
1
2
3
4
300
600
900
1200
I
C
(A)
V
CE
(V)
V
GE
= 15 V
25 °C
125 °C
0
1
2
0
4
5
3
7
8
6
10 11
9
13
12
200
400
800
600
1000
1200
V
GE
(V)
I
C
(A)
125 °C
25 °C
V
CE
= 20 V
I
C
(A)
E
on
, E
of
f
(mJ)
0
20
40
60
80
100
120
160
140
0
200
600
400
800
1000
1200
V
GE
= ± 15 V
T
J
=
125 °C
R
g
= 3
Ω
V
CC
= 600 V
Eon
Eoff
R
g
(
Ω)
0
20
40
60
80
100
120
140
160
0
5
10
15
20
25
E
on
E
off
V
GE
= ± 15 V
T
J
= 125 °C
I
C
= 600 A
V
CC
= 600 V
E
on
, E
of
f
(mJ)