Scr / diode converter, Igbt inverter, Gate drive board – C&H Technology PP150T120-02 User Manual
Page 3: Tentative, Pow-r-pak
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TENTATIVE
PP150T120-02
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
POW-R-PAK
TM
150A / 1200V
3 ph IGBT + converter assembly
PP150T120-02(-)
- 2 -
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
General Symbol
Units
IGBT Junction Temperature
T
j
-40 to +150
°C
Storage Temperature
T
stg
-40 to +125
°C
Operating Temperature
T
op
-25 to +85
°C
Isolation Voltage, AC 1 minute, 60Hz sinusoidal
V
iso
2500 Volts
SCR / Diode Converter
RMS Voltage Applied to AC Input Terminals
V
L
550 Volts
Peak Transient Input Voltage
V
LM
1600 Volts
IGBT Inverter
Collector Current (T
C
= 25°C)
I
C
150 Amperes
Peak Collector Current (T
j
< 150°C)
I
CM
300 Amperes
Emitter Current
I
E
150 Amperes
Peak Emitter Current
I
EM
300 Amperes
Maximum Collector Dissipation (T
j
< 150°C)
P
c
520 Watts
Gate Drive Board
Unregulated +24V Power Supply
30
Volts
Regulated +15V Power Supply
18
Volts
PWM Signal Input Voltage
20
Volts
Fault Output Supply Voltage
30
Volts
Fault Output Current
50
mA
IGBT Inverter Electrical Characteristics, T
j
= 25°C unless otherwise specified
Characteristics Symbol
Test
Conditions
Min
Typ
Max
Units
Collector Cutoff Current
I
CES
V
CE
= V
CES
, V
GE
= 0V
1
mA
I
C
= 150A, T
j
= 25°C
1.8
2.4
Volts
Collector – Emitter Saturation Voltage
V
CE(sat)
I
C
= 150A, T
j
= 125°C
1.9
Volts
Emitter – Collector Voltage
V
EC
I
E
= 150A
3.2
Volts
t
d(on)
150
ns
t
r
80
ns
t
d(off)
450
ns
Inductive Load Switching Times
t
f
300
ns
Diode Reverse Recovery Time
t
rr
150
ns
Diode Reverse Recovery Charge
Q
rr
V
CC
= 600V
I
C
= 150A
V
GE
= 15V
R
G
= 2.1
Ω
6.0 µC
DC Link Capacitance
3300
µF