C&H Technology VS210SG12HCB - Manual (Page 2)

Document Number: 93831 For technical questions, contact: [email protected] www.vishay.com
Revision: 28-Mar-08 1
Phase Control Thyristors
VS210SG12HCB
Vishay High Power Products
FEATURES
• 100 % tested at probe
• Solderable SCR
• Wafer in box, and die in chip carrier
Note
(1) Nitrogen flow on die edge
PRODUCT SUMMARY
Junction size Square 210 mils
Wafer size 4"
V
RRM
class 1200 V
Passivation process Glassivated MESA
Reference Vishay HPP
packaged part
25RIA Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum on-state voltage V
TM
T
J
= 25 °C, I
T
= 25 A 1.5
V
Maximum repetitive reverse voltage V
RRM
(1) T
J
= 25 °C, I
RRM
= 100 µA 1200
Maximum required DC gate current to trigger I
GT
T
J
= 25 °C, anode supply = 6 V, resistive load
60 mA
Maximum required DC gate voltage to trigger V
GT
1.9 V
Holding current range I
H
Anode supply = 6 V, resistive load
10 to 125
mA
Maximum latching current I
L
200
MECHANICAL DATA
Nominal back metal composition (thickness)
Cr-Ni-Ag (1 kÅ - 4 kÅ - 6 kÅ)
Nominal front metal composition (thickness)
Chip dimensions 210 x 210 mils - see dimensions (link at the end of datasheet)
Wafer diameter 100 mm, with standard < 100 > flat
Wafer thickness 370 µm ± 10 µm
Maximum width of sawing line 130 µm
Reject ink dot size Ø 0.25 mm minimum
Ink dot location See dimensions (link at the end of datasheet)
Recommended storage environment Storage in original container, in desiccated nitrogen, with no contamination