Vishay semiconductors – C&H Technology VS-GT150TH120N User Manual
Page 2
VS-GT150TH120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
1
Document Number: 94758
For technical questions within your region:
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 150 A
FEATURES
• Low V
CE(sat)
Trench IGBT technology
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS
• Inverter for motor drive
• AC and DC servo drive amplifier
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
150 A
V
CE(on)
(typical)
at I
C
= 150 A, 25 °C
1.70 V
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
300
A
T
C
= 80 °C
150
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
300
Diode continuous forward current
I
F
T
C
= 80 °C
150
Diode maximum forward current
I
FM
t
p
= 1 ms
300
Maximum power dissipation
P
D
T
J
= 150 °C
874
W
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V