Vs-ufb80fa60, Vishay semiconductors – C&H Technology VS-UFB80FA60 User Manual
Page 3
VS-UFB80FA60
www.vishay.com
Vishay Semiconductors
Revision: 03-Nov-11
2
Document Number: 93642
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ELECTRICAL SPECIFICATIONS PER DIODE (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Cathode to anode breakdown voltage
V
BR
I
R
= 100 μA
600
-
-
V
Forward voltage
V
FM
I
F
= 30 A
-
1.32
1.69
I
F
= 60 A
-
1.52
1.9
I
F
= 30 A
T
J
= 125 °C
-
1.14
1.39
I
F
= 60 A
-
1.38
1.66
Reverse leakage current
I
RM
V
R
= V
R
rated
-
0.1
50
μA
T
J
= 175 °C, V
R
= V
R
rated
-
0.2
1.0
mA
Junction capacitance
C
T
V
R
= 600 V
-
30
-
pF
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNITS
Reverse recovery time
t
rr
T
J
= 25 °C
I
F
= 1 A
dI
F
/dt = 200 A/μs
V
R
= 30 V
-
34
-
ns
T
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-
79
-
T
J
= 125 °C
-
155
-
Peak recovery current
I
RRM
T
J
= 25 °C
-
6
-
A
T
J
= 125 °C
-
14
-
Reverse recovery charge
Q
rr
T
J
= 25 °C
-
234
-
nC
T
J
= 125 °C
-
1085
-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
MIN. TYP. MAX.
UNITS
Junction to case, single leg conducting
R
thJC
-
-
1.02
°C/W
Junction to case, both leg conducting
-
-
0.51
Case to heatsink
R
thCS
Flat, greased surface
-
0.10
-
Weight
-
30
-
g
Mounting torque
-
1.3
-
Nm
Case style
SOT-227