Vishay semiconductors – C&H Technology VSKDS409-150 User Manual
Page 5
VSKDS409/150
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Vishay Semiconductors
Revision: 09-Jan-12
4
Document Number: 94649
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Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Maximum Non-Repetitive Surge Current
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
400
300
200
100
500
0
100
160
140
180
0
60
80
120
40
20
94649_05
Square wave (D = 0.50)
80 % rated V
R
applied
See note (1)
DC
Average Power Loss (W)
I
F(AV)
-
Average Forward Current (A)
250
150
200
100
50
300
0
250
200
300
0
100
150
50
94649_06
RMS limit
DC
D = 0.75
D = 0.20
D = 0.25
D = 0.33
D = 0.50
1000
10
100
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Sur
g
e
Current (A)
10 000
94649_07
1000
10 000
100 000
At any rated load condition
and with rated V
RRM
applied
following surge
Current
monitor
High-speed
switch
D.U.T.
R
g
= 25
Ω
+
Freewheel
diode
V
d
= 25 V
L
IRFP460
40HFL40S02