C&H Technology T7H8_65 - Manual (Page 4)

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Phase Control SCR
www.pwrx.com
650 Amperes Average
1800 Volts
Revision Date: 08/25/2008
T7H8
650A
Thermal Characteristics
Maximum Thermal Resistance, Double Sided Cooling Max. Units
Junction-to-Case
Case-to-Sink R
Θ(J-C)
R
Θ(C-S)
0.04
0.02 °C/W
°C/W
Electrical Characteristics, T
J
=25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Repetitive Peak Reverse Leakage Current I
RRM
T
J
=125°C, V
R
= V
RRM
30 mA
Repetitive Peak Forward Leakage Current I
DRM
T
J
=125°C, V
D
= V
DRM
30 mA
Peak On-State Voltage V
TM
I
FM
=625A peak,
Duty Cycle < 0.1 %
1.50 V
Threshold Voltage, Low-level
Slope Resistance, Low-level V
(TO)1
r
T1
T
J
= 125°C, I = 15%I
T(AV)
to
π
I
T(AV)
1.0336
0.62862
V
mΩ
Threshold Voltage, High-level
Slope Resistance, High-level V
(TO)2
r
T2
T
J
= 125°C, I =
π
I
T(AV)
to I
TSM
1.68191
0.36847
V
mΩ
V
TM
Coefficients, Low-level
T
J
= 125°C, I = 15%I
T(AV)
to
π
I
T(AV)
V
TM
= A+ B Ln(I) +C(I) + D Sqrt(I)
A =
B =
C =
D = 1.41917
-0.1663
1.243 E-04
0.04196
Typical Turn-On Time t
on
I
T
= 100A, V
D
= 100 V 7 µ s
Typical Turn-Off Time t
q
T
j
= 125°C, I
T
= 250A,
di
R
/dt = 25A/µs Reapplied
dv/dt = 20 V/µs Linear to 80% V
DRM
150 µ s
Minimum Critical dv/dt – Exponential to V
DRM
dv/dt T
J
= 125°C 300 V/µ s
Gate Trigger Current I
GT
T
J
= 25°C, V
D
= 12 V 150 mA
Gate Trigger Voltage V
GT
T
J
= 25°C, V
D
= 12 V 3.0 V
Non-Triggering Gate Voltage V
GDM
T
J
= 125°C, V
D
= V
DRM
0.15 V
Peak Forward Gate Current I
GTM
4 A
Peak Reverse Gate Voltage V
GRM
5 V