Vishay semiconductors – C&H Technology VS-UFB280FA20 User Manual
Page 5
VS-UFB280FA20
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Vishay Semiconductors
Revision: 04-Nov-11
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Document Number: 93463
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Fig. 5 - Maximum Allowable Case Temperature vs. Average
Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
0
40
Allo
wab
le Case
T
emperature (°C)
I
F(AV)
- Average Forward Current (A)
150
175
See note (1)
75
50
80
120
200
360
0
25
160
240
100
125
280 320
DC
Square wave (D = 0.50)
Rated V
R
applied
Forwar
d P
o
wer Loss (W)
0
50
100
150
200
250
300
350
0
50
100
150
200
250
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
I
F(AV)
- Average Forward Current (A)
100
1000
t
rr
(ns)
dI
F
/dt (A/µs)
20
40
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
30
70
10
I
F
= 150 A
I
F
= 75 A
60
50
100
1000
Q
rr
(nC)
dI
F
/dt (A/µs)
200
I
F
= 150 A
I
F
= 75 A
900
700
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
500
800
0
100
300
600
400