C&H Technology VS-GT400TH60N - Manual (Page 4)

VS-GT400TH60N
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Vishay Semiconductors
Revision: 06-Aug-12 3 Document Number: 93488
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Fig. 1 - IGBT Typical Output Characteristics
V
GE
= 15 V
Fig. 2 - IGBT Typical Transfer Characteristics
V
CE
= 20 V
Fig. 3 - IGBT Switching Loss vs. Collector Current
V
CC
= 600 V, R
g
= 1.3 , V
GE
= ± 15 V, T
J
= 175 °C
Fig. 4 - Switching Loss vs. Gate Resistor
V
CE
= 600 V, I
C
= 400 A, V
GE
= ± 15 V, T
J
= 175 °C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- - 175
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case

per ½ module
IGBT
R
thJC
- - 0.094
K/W Diode - - 0.158
Case to sink R
thCS
Conductive grease applied - 0.035 -
Mounting torque
Power terminal screw: M6 2.5 to 5.0
Nm
Mounting screw: M6 3.0 to 5.0
Weight 300 g
I C
(A)
V
CE
(V)
0 0.5 1.5 1.0 2.0 2.5 4.0 3.0 3.5
0
93488_01
800
400
200
100
300
500
700
600
175 °C
25 °C
I C
(A)
V
GE
(V)
3 8 9 4 5 6 7 10
93488_02
800
400
100
0
200
600
500
300
700
T
J
= 175 °C
T
J
= 25 °C
E
on
, E
off
(mJ)
I
C
(A)
0 800 600 400 200
0
20
10
30
50
40
60
93488_03
70
E
off
E
on
E
on
, E
off
(mJ)
R
g
( Ω)
0 20 5 10 15
0
10
20
30
50
60
40
93488_04
100
70
80
90
E
on
E
off