Vishay semiconductors, Forward conduction, Blocking – C&H Technology VS-T20HF220 User Manual
Page 3: Thermal and mechanical specifications, R conduction per junction
VS-T20HF220
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Vishay Semiconductors
Revision: 24-Apr-12
2
Document Number: 94709
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Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the
compound
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL
TEST
CONDITIONS T20HF
UNITS
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
20
A
85
°C
Maximum RMS forward current
I
F(RMS)
31
A
Maximum peak, one-cycle
forward, non-repetitive
surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal
half wave,
initial T
J
=
T
J
maximum
450
A
t = 8.3 ms
470
t = 10 ms
100 % V
RRM
reapplied
380
t = 8.3 ms
400
Maximum I
2
t for fusing
I
2
t
t = 10 ms
No voltage
reapplied
1015
A
2
s
t = 8.3 ms
920
t = 10 ms
100 % V
RRM
reapplied
715
t = 8.3 ms
650
Maximum I
2
t for fusing
I
2
t
t = 0.1 ms to 10 ms, no voltage reapplied
10 125
A
2
s
Low level value of
threshold voltage
V
F(TO)1
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
0.77
V
High level value of
threshold voltage
V
F(TO)2
(I >
x I
F(AV)
), T
J
maximum
0.89
Low level value of
forward slope resistance
r
f1
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
maximum
8.5
m
High level value of
forward slope resistance
r
f2
(I >
x I
F(AV)
), T
J
maximum
6.7
Maximum forward voltage drop
V
FM
I
FM
= 60 A, T
J
= 25 °C,
t
p
= 400 μs square pulse
Average power = V
F(TO)
x I
F(AV)
+ r
f
x (I
F(RMS)
)
2
1.50
V
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
T20HF
UNITS
Maximum peak reverse
leakage current
I
RRM
T
J
= 150 °C
18
mA
RMS isolation voltage
V
ISOL
50 Hz, circuit to base, all terminals shorted
T
J
= 25 °C, t = 1 s
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
T20HF
Maximum junction operating
and storage temperature range
T
J
, T
Stg
- 40 to 150
°C
Maximum thermal resistance,
junction to case per junction
R
thJC
DC operation
2.53
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface smooth, flat
and greased
0.2
Mounting torque,
± 10 %
to heatsink
Non-lubricated
threads
M3.5 mounting screws
(1)
1.3 ± 10 %
Nm
terminals
M5 screw terminals
3 ± 10 %
Approximate weight
See dimensions - link at the end of datasheet
54
g
Case style
T-module (D-55)
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION AT T
J
MAXIMUM
RECTANGULAR CONDUCTION AT T
J
MAXIMUM
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
T20HF...
0.29
0.34
0.43
0.64
1.10
0.20
0.35
0.47
0.67
1.11
K/W