Vishay semiconductors – C&H Technology VS-UFB250FA60 User Manual
Page 5
VS-UFB250FA60
www.vishay.com
Vishay Semiconductors
Revision: 27-Jun-11
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Document Number: 93626
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Fig. 5 - Maximum Current Rating (Per Leg)
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Recovery Charge vs. dI
F
/dt
Fig. 9 - Typical Recovery Current vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Allo
wab
le Case
T
emperature (°C)
Current Rating (A)
0
20
40
60
80
100
120
140
160
180
0
50
100
150
200
250
300
DC
Square wave (D = 0.5)
80 % rated V
R
applied
Forwar
d P
o
wer Loss (W)
Forward Current (A)
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
DC
RMS limit
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
t
rr
(ns)
dI
F
/dt (A/µs)
50
100
150
200
250
300
350
400
450
500
100
1000
T
J
= 25 °C
T
J
= 150 °C
V
R
= 200 V
I
F
= 50 A
Q
rr
(nC)
dI
F
/dt (A/µs)
0
2000
4000
6000
8000
10 000
12 000
14 000
100
1000
T
J
= 25 °C
T
J
= 150 °C
V
R
= 200 V
I
F
= 50 A
I
rr
(A)
dI
F
/dt (A/µs)
0
10
20
30
40
50
60
70
80
90
100
100
1000
V
R
= 200 V
I
F
= 50 A
T
J
= 25 °C
T
J
= 150 °C