C&H Technology CM75MXA-24S - Manual (Page 4)

CM75MXA-24S
NX-S Series CIB Module
(3Ø Converter + 3Ø Inverter + Brake)
75 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
2 05/11 Rev. 2
Absolute Maximum Ratings, T
j
= 25°C unless otherwise specified
Inverter Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (V
GE
= 0V) V
CES
1200 Volts
Gate-Emitter Voltage (V
CE
= 0V) V
GES
±20 Volts
Collector Current (DC, T
C
= 122°C) *2,*3 I
C
75 Amperes
Collector Current (Pulse, Repetitive) *4 I
CRM
150 Amperes
Total Power Dissipation (T
C
= 25°C) *2,*3 P
tot
600 Watts
Emitter Current (T
C
= 25°C) *2,*3 I
E
*1 75 Amperes
Emitter Current (Pulse, Repetitive) *4 I
ERM
*1 150 Amperes
Maximum Junction Temperature T
j(max)
175 °C
Brake Part IGBT/FWDi
Characteristics Symbol Rating Units
Collector-Emitter Voltage (V
GE
= 0V) V
CES
1200 Volts
Gate-Emitter Voltage (V
CE
= 0V) V
GES
±20 Volts
Collector Current (DC, T
C
= 125°C) *2,*3 I
C
50 Amperes
Collector Current (Pulse, Repetitive) *4 I
CRM
100 Amperes
Total Power Dissipation (T
C
= 25°C) *2,*3 P
tot
425 Watts
Repetitive Peak Reverse Voltage (V
GE
= 0V) V
RRM
1200 Volts
Forward Current (T
C
= 25°C) *2,*3 I
F
*1 50 Amperes
Forward Current (Pulse, Repetitive) *4 I
FRM
*1 100 Amperes
Maximum Junction Temperature T
j(max)
175 °C
Converter Part ConvDi
Characteristics Symbol Rating Units
Repetitive Peak Reverse Voltage V
RRM
1200 Volts
Recommended AC Input Voltage E
a
440 V
RMS
DC Output Current (3-phase Full Wave Rectifying, T
C
= 125°C) *2,*3 I
O
75 Amperes
Surge Forward Current (Sine Half Wave 1 Cycle Peak Value, f = 60 Hz, Non-repetitive) I
FSM
750 Amperes
Current Square Time (Value for One Cycle of Surge Current) I 2
t
2340 A 2 s
Maximum Junction Temperature T
j(max)
150 °C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
*2 Case temperature (T C ) and heatsink temperature (T s ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*3 Junction temperature (T j ) should not increase beyond maximum junction
temperature (T j(max) ) rating.
*4 Pulse width and repetition rate should be such that device junction temperature (T j )
does not exceed T j(max) rating.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
53
54
55
56
57
58
59
60
61
30
29
28
27
26
25
24
23
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
0 0
17.2
19.4
18.1
31.2
32.6
47.0
48.0
15.2
LABEL SIDE
Each mark points to the center position of each chip.
Tr*P / Tr*N / TrBr (* = U/V/W): IGBT Di*P / Di*N (* = U/V/W): FWDi
DiBr: Clamp Di CR*P / CR*N (* = R/S/T): Conv Di
Th: NTC Thermistor
0
24.5
18.2 0 33.9 26.0 71
.3
83.5 93.3 102.9
46.8 36.4 64.5 72.9 82.4 90.8 99.3 108.8
25.6
24.6
35.9
42.5
46.2
11
0.9
Tr
Br Di
Br
Di
UN
Di
VN
Di
WN
Tr
UN
Tr
VN
Tr
WN
Tr
WP
Th
CR
RN
CR
SN
CR
TN
CR
RP
CR
SP
CR
TP
Di
WP
Di
VP
Tr
VP
Di
UP
Tr
UP