C&H Technology VSKU-V56..PbF Series - Manual (Page 4)

Document Number: 94515 For technical questions, contact: [email protected] www.vishay.com
Revision: 25-Apr-08 3
VSKU/V41, 56..PbF Series
Thyristor/Thyristor, 45/60 A
(ADD-A-PAK TM Generation 5 Power Modules)
Vishay High Power Products
Note
(1) Available with dV/dt = 1000 V/µs, to complete code add S90 i.e. VSKU41/16AS90
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
GM
10
W
Maximum average gate power P
G(AV)
2.5
Maximum peak gate current I
GM
2.5 A
Maximum peak negative gate voltage - V
GM
10
V
Maximum gate voltage required to trigger V
GT
T
J
= - 40 °C
Anode supply = 6 V
resistive load
4.0
T
J
= 25 °C 2.5
T
J
= 125 °C 1.7
Maximum gate current required to trigger I
GT
T
J
= - 40 °C 270
mA T
J
= 25 °C 150
T
J
= 125 °C 80
Maximum gate voltage that will not trigger V
GD
T
J
= 125 °C, rated V
DRM
applied
0.25 V
Maximum gate current that will not trigger I
GD
6 mA
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak reverse and off-state
leakage current at V
RRM
, V
DRM
I
RRM,
I
DRM
T
J
= 125 °C, gate open circuit 15 mA
RMS insulation voltage V
INS
50 Hz, circuit to base, all terminals shorted
2500 (1 min)
3500 (1 s)
V
Maximum critical rate of rise of
off-state voltage
dV/dt (1) T
J
= 125 °C, linear to 0.67 V
DRM
, gate open circuit 500 V/µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Junction operating and storage
temperature range
T
J
, T
Stg
- 40 to 125 °C
Maximum internal thermal resistance,
junction to case per module
R
thJC
DC operation 0.23
K/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased 0.1
Mounting torque ± 10 %
to heatsink A mounting compound is recommended and the
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound. 5
Nm
busbar 3
Approximate weight
110 g
4 oz.
Case style JEDEC TO-240AA
ΔR CONDUCTION PER JUNCTION
DEVICES
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VSKU/V41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34
°C/W
VSKU/V56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28