Vishay semiconductors, Thermal and mechanical specifications – C&H Technology GT100DA60U User Manual
Page 4
GT100DA60U
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Vishay Semiconductors
Revision: 24-Oct-12
3
Document Number: 93185
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - IGBT Reverse Bias SOA
T
J
= 175 °C, V
GE
= 15 V
Fig. 3 - Typical IGBT Collector Current Characteristics
V
GE
= 15 V
Fig. 4 - Maximum DC Forward Current vs.
Case Temperature
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN. TYP. MAX.
UNITS
Maximum junction and storage temperature range
T
J
, T
Stg
- 40
-
175
°C
Junction to case
IGBT
R
thJC
-
-
0.26
°C/W
Diode
-
-
0.73
Case to sink per module
R
thCS
-
0.05
-
Mounting torque, 6-32 or M3 screw
-
-
1.3
Nm
Weight
-
30
-
g
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
0
93185_01
20
40
60
100
140
180
80
120
160
200
0
180
160
100
120
140
20
40
60
80
I
C
(A)
V
CE
(V)
1
10
100
1000
0.01
0.1
1
93185_02
1000
10
100
I
C
(A)
V
CE
(V)
0
4.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
93185_02
300
100
200
275
75
175
250
50
150
225
25
125
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
80
60
40
20
100
120
0
100
160
180
0
40
60
140
80
120
20
93185_04