Vishay semiconductors, Int-a-pak power modules ultrafast diodes, 300 a – C&H Technology VSKCU300-06PbF User Manual
Page 3
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Document Number: 93155
2
,
,
Revision: 18-May-10
VSKCU300/06PbF
Vishay Semiconductors
INT-A-PAK Power Modules
Ultrafast Diodes, 300 A
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL
TEST
CONDITIONS MIN.
TYP.
MAX.
UNITS
Reverse recovery time
t
rr
T
J
= 25 °C
I
F
= 50 A
dI/dt = 200 A/μs
V
R
= 400 V (per leg)
-
130
165
ns
T
J
= 125 °C
-
195
260
Peak recovery current
I
rr
T
J
= 25 °C
-
11
18
A
T
J
= 125 °C
-
20
30
Reverse recovery charge
Q
rr
T
J
= 25 °C
-
670
1485
nC
T
J
= 125 °C
-
1800
3900
Peak rate of recovery current
dI
(rec)M
/dt
T
J
= 125 °C
-
-
400
A/μs
Softness factor per leg
s
I
F
= 50 A, T
J
= 25 °C, dI/dt = 400 A/μs, V
R
= 200 V
-
0.2
-
I
F
= 50 A, T
J
= 125 °C, dI/dt = 400 A/μs, V
R
= 200 V
-
0.22
-
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating and
storage temperature range
T
J
, T
Stg
- 40 to 150
°C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
0.16
K/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased
0.05
Mounting
torque ± 10 %
to heatsink
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow the spread of the compound.
4 to 6
Nm
busbar
Approximate weight
200
g
7.1
oz.
Case style
INT-A-PAK