Datasheet, Vishay semiconductors – C&H Technology VSKDU300-06PbF User Manual
Page 2
Document Number: 94549
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 19-May-10
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INT-A-PAK Power Modules Ultrafast Diodes, 300 A
VSKDU300/06PbF
Vishay Semiconductors
FEATURES
• Electrically insulated by DBC ceramic
• 3500 V
RMS
isolating voltage
• Standard JEDEC package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Case style INT-A-PAK
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
F(AV)
at T
C
300 A at 48 °C
V
R
600 V
t
rr
(typical)
130 ns
I
F(DC)
at T
C
230 A at 100 °C
INT-A-PAK
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
V
R
600
V
Continuous forward current per leg
I
F
T
C
= 25 °C
435
A
T
C
= 100 °C
230
Single pulse forward current
I
FSM
Limited by junction temperature
TBD
Maximum power dissipation per leg
P
D
T
C
= 25 °C
781
W
T
C
= 100 °C
313
Operating junction and storage
temperature range
T
J
, T
Stg
- 40 to 150
°C
RMS insulation voltage
V
INS
50 Hz, circuit to base,
all terminals shorted, t = 1 s
3500
V
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS MIN.
TYP.
MAX.
UNITS
Cathode to anode breakdown voltage
V
BR
I
R
= 500 μA
600
-
-
V
Forward voltage drop per leg
V
FM
I
F
= 150 A
-
1.23
1.53
I
F
= 300 A
-
1.43
1.96
I
F
= 150 A, T
J
= 125 °C
-
1.11
1.29
I
F
= 300 A, T
J
= 125 °C
-
1.39
1.73
Maximum reverse leakage current
I
RM
T
J
= 150 °C, V
R
= 600 V
-
-
50
mA