Vishay semiconductors – C&H Technology VS-UFB130FA40 User Manual
Page 5
VS-UFB130FA40
www.vishay.com
Vishay Semiconductors
Revision: 26-Oct-11
4
Document Number: 93602
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
I
F(AV)
- Average Forward Current (A)
0
25
50
75
100
125
150
175
0
20
40
60
80
100
120
140
160
A
llo
w
a
b
le
C
a
s
e
T
e
m
p
er
at
u
re (
°
C)
DC
Square wave (D = 0.50)
Rated V
R
applied
A
vera
g
e
P
o
wer Loss (W)
I
F(AV)
- Average Forward Current (A)
0
25
50
75
100
125
150
0
10 20 30 40 50 60 70 80 90 100 110 120
DC
RMS limit
D = 0.05
D = 0.10
D = 0.20
D = 0.33
D = 0.50
100
1000
t
rr
(ns)
dI
F
/dt (A/μs)
80
140
V
RR
= 200 V
I
F
= 50 A
110
160
50
T
J
= 125 °C
T
J
= 25 °C
130
60
70
90
100
120
150
100
1000
Q
rr
(nC)
dI
F
/dt (A/μs)
1050
3050
2550
V
RR
= 200 V
I
F
= 50 A
2050
50
550
1550
T
J
= 125 °C
T
J
= 25 °C