Vishay semiconductors – C&H Technology VS-GT400TH120N User Manual
Page 2
VS-GT400TH120N
www.vishay.com
Vishay Semiconductors
Revision: 17-Sep-12
1
Document Number: 94748
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Molding Type Module IGBT,
2-in-1 Package, 1200 V and 400 A
FEATURES
• Low V
CE(on)
trench IGBT technology
• Low switching losses
• 10 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 150 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
• Isolated copper baseplate using DCB (Direct Copper
Bonding) technology
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• UPS
• Inverter for motor drive
• AC and DC servo drive amplifier
DESCRIPTION
Vishay’s IGBT power module provides ultralow conduction
loss as well as short circuit ruggedness. It is designed for
applications such as general inverters and UPS.
Note
(1)
Repetitive rating: Pulse width limited by maximum junction temperature.
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 80 °C
400 A
V
CE(on)
(typical)
at I
C
= 400 A, 25 °C
1.70 V
Double INT-A-PAK
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
1200
V
Gate to emitter voltage
V
GES
± 20
Collector current
I
C
T
C
= 25 °C
600
A
T
C
= 80 °C
400
Pulsed collector current
I
CM
(1)
t
p
= 1 ms
800
Diode continuous forward current
I
F
T
C
= 80 °C
400
Diode maximum forward current
I
FM
t
p
= 1 ms
800
Maximum power dissipation
P
D
T
J
= 150 °C
2119
W
Short circuit withstand time
t
SC
T
J
= 125 °C
10
μs
RMS isolation voltage
V
ISOL
f = 50 Hz, t = 1 min
2500
V