C&H Technology CM600DU-24F - Manual (Page 4)

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CM600DU-24F
Dual IGBTMOD™ F-Series Module
600 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
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Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C ies – – 230 nf
Output Capacitance C
oes
V
CE
= 10V, V
GE
= 0V – – 10 nf
Reverse Transfer Capacitance C
res
– – 6 nf
Resistive Turn-on Delay Time t
d(on)
V
CC
= 600V, I
C
= 600A, – – 450 ns
Load Rise Time t
r
V
GE1
= V
GE2
= 15V, – – 200 ns
Switch Turn-off Delay Time t d(off) R G = 1.0 ⍀ , – – 800 ns
Times Fall Time t
f
Inductive Load – – 300 ns
Diode Reverse Recovery Time* t
rr
Switching Operation – – 500 ns
Diode Reverse Recovery Charge* Q
rr
I
E
= 600A – 43.2 – µ C
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R th(j-c) Q Per IGBT 1/2 Module, T c Reference – – 0.081
°
C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case R
th(j-c)
R Per FWDi 1/2 Module, T
c
Reference – – 0.11 ° C/W
Point per Outline Drawing
Thermal Resistance R
th(j-c')
Q Per IGBT 1/2 Module – – 0.032**
°
C/W
T
c
Reference Point Under Chips
Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – 0.010 –
°
C/W
External Gate Resistance R
G
1.0 – 52 Ω
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**If you use this value, R th(f-a) should be measured just under the chips.